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| 2SK3613-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOS FET MOSFET POWER FUJI Outline Drawings (mm) Drawings (mm) O}*@-OE S OUT VIEW Fig.1 oQAE* Z}* i- MARKING *\Z|"a--e *AE Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o}*Zi- DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j* ' P.*iQl* l'B jIZ*@ -a*" e** AE Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings Unit 250 V 220 V Continuous drain current 14 A 2.2 ** A Pulsed drain current ID(puls] 56 A Gate-source voltage VGS 30 V Non-repetitive Avalanche current IAS *2 14 A Maximum Avalanche Energy EAS *1 129.1 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/s Peak Diode Recovery dV/dt dV/dt *3 5 kV/s Max. power dissipation PD Tc=25C 105 W Ta=25C 2.4 ** +150 Operating and storage Tch C -55 to +150 temperature range Tstg C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=1.11mH, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch <150C = *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 250V *5 VGS=-30V = = = = Item Drain-source voltage Symbol VDS VDSX *5 ID Tc=25C Ta=25C "a*\Z|--e *W Special specification for customer CONNECTION 11 G : : Gate G Gate OE*u} D "AZe*iL* Lot No. *bgNo. Type name 22 S1 : : Source1 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 OE-1/4 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V RGS=10 VCC=125V ID=10A VGS=10V L=1.11mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 1.10 0.155 1.05 Min. 250 3.0 Typ. Max. 5.0 25 250 100 260 1178 132 6 18 4.1 33 11.1 31.5 12 7.5 1.65 Units V V A nA m S pF 5 ns nC 14 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) ** Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 1.191 87.0 52.0 Units C/W C/W C/W ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) www.fujielectric.co.jp/denshi/scd 1 2SK3613-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 150 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 125 4 100 (Drain pad area : 500mm ) 2 3 PD [W] 75 PD [W] 0 25 50 75 100 125 150 2 50 25 1 0 0 0 25 50 75 100 125 150 Tc [C] Tc [C] 350 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=6A Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 30 20V 25 10V 8V 7.5V 7.0V 300 250 IAS=9A 20 EAS [mJ] ID [A] 200 15 6.5V 150 IAS=14A 10 100 6.0V 50 5 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 starting Tch [C] VDS [V] Typical Transfer Characteristic 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] gfs [S] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] 2 2SK3613-01 FUJI POWER MOSFET 0.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS= 5.5V 6.0V 6.5V 800 700 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 0.5 7.0V 600 RDS(on) [ ] 0.4 RDS(on) [ m ] 7.5V 8V 10V 20V 500 400 max. 300 200 typ. 0.3 0.2 0.1 100 0.0 0 5 10 15 20 25 30 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 7.0 6.5 6.0 5.5 5.0 max. 10 12 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 8 Vcc= 125V 6 4 2 0 0 10 20 30 40 Tch [C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 10 0 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C Ciss 10 10 -1 C [nF] Coss IF [A] 1 0.1 0.00 10 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3613-01 FUJI POWER MOSFET Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10 100 90 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Rth(ch-a) [C/W] 80 70 60 50 40 30 20 10 2 tf t [ns] td(off) td(on) 10 1 tr 10 10 0 0 -1 10 10 0 10 1 10 2 0 1000 2000 3000 2 4000 5000 ID [A] Drain Pad Area [mm ] 10 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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